The American Institute of Physics reports that a team of engineers from Cornell University, the University of Notre Dame, and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches. The work was performed under a grant from the U.S. Department of Energy’s (DOE) Advanced Research Projects Agency-Energy (ARPA-E) “SWITCHES” program and recently published in Applied Physics Letters. | Full AIP story (Dec. 15, 2015)